PART |
Description |
Maker |
MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED) GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies Optek Technology
|
SIM-20ST |
Sensors > Infrared Light Emitting Diodes Infrared light emitting diode/ side-view type Infrared Light Emitting Diode, Side-view Type(红外光发射二极管)
|
Rohm CO.,LTD.
|
TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
GL513F GL514 GL513 |
Emitting Diode TO-18 Type Infrared TO-18 Type Infrared Emitting Diode 8型红外发光二极管
|
Sharp, Corp. SHARP[Sharp Electrionic Components] Sharp Electrionic Compo...
|
LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|